Preparation of flexible inverted metamorphic four-junction AlGaInP/AlGaAs/GaAs/In0.16Ga0.84As quantum well solar cells

Z Zhitao Chen (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,) W Wencong Yan (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,) X Xinyi Li J Junhua Long (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,) Q Qiangjian Sun (Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,) M Min Zhou X Xiaoxu Wu (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,) M Menglu Yu (School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,) Q Qing Gong E Erpeng Li (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,) W Wenhao Miao (Hydrogen Energy Industry Institute of Jilin Province, Changchun Institute of Applied Chemistry) C Changwu Ge (Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,) S Shulong Lu (Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,)

Abstract

To achieve high efficiency in five-junction solar cells under a space spectrum, it is essential to precisely adjust the subcells' bandgap to achieve optimal spectral matching. In this work, strain-balanced quantum wells (QWs) are employed to fine-tune the bandgap combination of inverted metamorphic (IMM) four-junction solar cells, which are based on the top four junctions of IMM five-junction solar cells. The 60-period QWs expand the absorption spectrum of the current-limited GaAs subcell to longer wavelengths, resulting in an external quantum efficiency of 48%. The short-circuit current density of the GaAs subcell increased from 10.283 to 11.171 mA/cm2. Consequently, the maximum current mismatch of the four-junction solar cells decreased from 12.2% to 4.6%. We have successfully prepared a flexible four-junction solar cell with a photoelectric conversion efficiency of 30.14% (8 cm2, AM0 spectrum), an open-circuit voltage of 4.347 V, and a retention rate of bending test performance that is over 99%. Based on the performance parameters of the four-junction QW cells, we estimate that the efficiency of the flexible five-junction solar cells prepared on this basis will be further improved.

Article Details

Volume / Issue Vol. 128, Issue 19
Published May 11, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (13)

Z

Zhitao Chen

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,

W

Wencong Yan

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,

X

Xinyi Li

J

Junhua Long

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,

Q

Qiangjian Sun

Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,

M

Min Zhou

X

Xiaoxu Wu

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,

M

Menglu Yu

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China 1 , Hefei 230026,

Q

Qing Gong

E

Erpeng Li

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,

W

Wenhao Miao

Hydrogen Energy Industry Institute of Jilin Province, Changchun Institute of Applied Chemistry

C

Changwu Ge

Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,

S

Shulong Lu

Key Laboratory of Semiconductor Display Materials and Chips, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences 2 , Suzhou 215123,