Preparation and simulation of high-frequency lead-free NBBT/epoxy 1–3 piezoelectric composites with high electromechanical coupling characteristics

L Lin Li J Jinpeng Ma X Xun Zhou Y Yaqi Liu Y Yanxue Tang (Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University 1 , 200234 Shanghai,) F Feifei Wang Q Qiaozhen Zhang (College of Information, Mechanical and Electrical Engineering, Shanghai Normal University 1 , Shanghai 200233,) Q Qingwen Yue (Shanghai Institute of Ceramics, Chinese Academy of Sciences 2 , Shanghai 201800,) D Di Lin H Haosu Luo (Shanghai Institute of Ceramics, Chinese Academy of Sciences 2 , Shanghai 201800,) X Xiangyong Zhao (Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University 1 , 200234 Shanghai,)

Abstract

In this article, we design and fabricate (1 − x)Na0.5Bi0.5TiO3-xBaTiO3 single-crystal/epoxy 1–3 piezoelectric composites (NBBT 1–3 composites) with high coefficients of electromechanical coupling and demonstrate their considerable potential for use in high-frequency ultrasonic devices. We conducted finite element simulations on samples of the NBBT 1–3 composite to optimize their dimensional parameters. We used the cut-and-fill method to prepare an array of the NBBT-based 1–3 composite with a spacing of 20 μm between elements. It exhibited an exceptionally high coefficient of electromechanical coupling kt of 80.8%, with measured resonant and antiresonant frequencies of 11.6 and 18.5 MHz, respectively. Lead-free NBBT 1–3 composites that can deliver excellent performance are highly promising for use in medical applications of high-frequency ultrasound, especially for the brain–computer interface and intravascular ultrasound imaging.

Article Details

Volume / Issue Vol. 126, Issue 8
Published February 24, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

L

Lin Li

J

Jinpeng Ma

X

Xun Zhou

Y

Yaqi Liu

Y

Yanxue Tang

Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University 1 , 200234 Shanghai,

F

Feifei Wang

Q

Qiaozhen Zhang

College of Information, Mechanical and Electrical Engineering, Shanghai Normal University 1 , Shanghai 200233,

Q

Qingwen Yue

Shanghai Institute of Ceramics, Chinese Academy of Sciences 2 , Shanghai 201800,

D

Di Lin

H

Haosu Luo

Shanghai Institute of Ceramics, Chinese Academy of Sciences 2 , Shanghai 201800,

X

Xiangyong Zhao

Key Laboratory of Optoelectronic Material and Device, Department of Physics, Shanghai Normal University 1 , 200234 Shanghai,