Preparation and characterization of zirconium-doped indium oxide conducting films with high infrared transparency

H Hanpeng Liu (School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,) L Liang Wang L Lin'an He (School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,) W Wei Mi D Di Wang L Liwei Zhou Y Yan Zhu J Juan Wang (Department of Chemical and Biomolecular Engineering) X Xingcheng Zhang (Institute of Microelectronics of the Chinese Academy of Science 2 , Beijing 100029,) R Rongrong Chen K Kai Niu (Tianjin Infraytech Co., LTD 3 , Tianjin 300384,) J Jinshi Zhao (State Key Laboratory of Crystal Materials School of Materials Science and Engineering Tianjin University of Technology Tianjin 300384 China)

Abstract

This work reports the zirconium-doped indium oxide (IZRO) transparent conductive thin films on infrared optical quartz glass (JGS-3) substrates via room-temperature RF magnetron sputtering. The effects of annealing temperature and oxygen flow ratio on electrical and optical properties were systematically investigated. The optimized IZRO film with 3 sccm oxygen flow and 700 °C annealing temperatures exhibited an average optical transmittance of 91.5% in the wavelength of 1300–1550 nm and a minimum resistivity of 1.37 × 10−3 Ω·cm with a carrier concentration of 2.46 × 1020 cm−3. The results of x-ray photoelectron spectroscopy revealed that the enhanced electrical conductivity can be attributed to the activation of Zr doping through high-temperature annealing. Meanwhile, the structural and morphological properties of the obtained films were investigated in detail. The IZRO films have potential in the field of short-wave infrared (SWIR) optoelectronic devices due to their SWIR transparent conductive properties.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

H

Hanpeng Liu

School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,

L

Liang Wang

L

Lin'an He

School of Integrated Circuit Science and Engineering, State Key Laboratory of Crystal Materials, Engineering Research Center of Optoelectronic Devices and Communication Technology, Tianjin University of Technology 1 , Tianjin 300384,

W

Wei Mi

D

Di Wang

L

Liwei Zhou

Y

Yan Zhu

J

Juan Wang

Department of Chemical and Biomolecular Engineering

X

Xingcheng Zhang

Institute of Microelectronics of the Chinese Academy of Science 2 , Beijing 100029,

R

Rongrong Chen

K

Kai Niu

Tianjin Infraytech Co., LTD 3 , Tianjin 300384,

J

Jinshi Zhao

State Key Laboratory of Crystal Materials School of Materials Science and Engineering Tianjin University of Technology Tianjin 300384 China