Polarization-modulated electrical transport and photodetection in graphene/
                    <i>β</i>
                    -InSe/graphene heterostructures

Haichao Pan; Xing Li; Mingshun Qi; Yongpeng Wu; Wenjie Sun; Wenyuan Qiu; Dawei Li; Chenghao Deng

doi:10.1063/5.0333555

Polarization-modulated electrical transport and photodetection in graphene/ <i>β</i> -InSe/graphene heterostructures

H Haichao Pan (Center on Nanoenergy Research, Carbon Peak and Neutrality Science and Technology Development Institute, School of Physical Science & Technology, Guangxi University 1 , Nanning 530004,) X Xing Li (Interdisciplinary Science Center, State Key Laboratory of Animal Biodiversity Conservation and Integrated Pest Management, Institute of Zoology) M Mingshun Qi (Center on Nanoenergy Research, Carbon Peak and Neutrality Science and Technology Development Institute, School of Physical Science & Technology, Guangxi University 1 , Nanning 530004,) Y Yongpeng Wu (Center on Nanoenergy Research, Carbon Peak and Neutrality Science and Technology Development Institute, School of Physical Science & Technology, Guangxi University 1 , Nanning 530004,) W Wenjie Sun W Wenyuan Qiu (Center on Nanoenergy Research, Carbon Peak and Neutrality Science and Technology Development Institute, School of Physical Science & Technology, Guangxi University 1 , Nanning 530004,) D Dawei Li C Chenghao Deng (Center on Nanoenergy Research, Carbon Peak and Neutrality Science and Technology Development Institute, School of Physical Science & Technology, Guangxi University 1 , Nanning 530004,)

Abstract

Sliding ferroelectricity in 2D β-InSe has been confirmed, but its intrinsic electrical and photo-response under ferroelectric polarization remain unclear. Here, graphene/β-InSe/graphene heterostructures were fabricated using graphene electrodes, avoiding the destruction of InSe intrinsic ferroelectric polarization from interface defects in conventional metal contacts. Electrical measurements show robust in-plane and out-of-plane ferroelectric polarizations with synergistic regulation, ultralow switching voltage (&lt;6 V), and a four-order resistance window. The device exhibits high specific detectivity (∼1011 Jones) across the visible range, with photo-response effectively modulated by polarizations, unaffected by photocarriers. This system holds great promise for low-power nonvolatile electronics and intelligent optoelectronics.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 128, Issue 24

Published June 15, 2026

DOI 10.1063/5.0333555

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences