Piezoelectric strain-mediated control of the tunnel magnetoresistance effect in magnetic tunnel junctions with a Co2FeSi/V/PMN-PT multiferroic heterostructure
Abstract
Electric field (E) control of the tunnel magnetoresistance (TMR) effect is a key technology for reducing power consumption during data writing in spintronic memory devices. In this Letter, we explore E control of the TMR effect in magnetic tunnel junction devices with a Co2FeSi/V/PMN-PT multiferroic heterostructure. By controlling the polarity of the applied E to the multiferroic heterostructure, a repeatable and nonvolatile change in the TMR effect is achieved. The change in the TMR effect is strongly influenced by the microscopic domain structures in the Co2FeSi layer after the application of a certain E. To obtain optimal changes, it is important to consider the control of the microscopic domain structure governed by the magnetoelectric effect in the multiferroic heterostructure.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
T. Usami
Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka 1 , Suita, Osaka 565-0871,
Y. Kubo
Center for Spintronics Research Network, Graduate School of Engineering Science, The University of Osaka 2 , Toyonaka, Osaka 560-8531,
K. Suzuki
Department of Applied Physics, Graduate School of Engineering, Tohoku University 3 , Sendai, Miyagi 980-8579,
S. Mizukami
WPI Advanced Institute for Materials Research, Tohoku University 4 , Sendai, Miyagi 980-8577,
K. Hamaya
Spintronics Research Network Division, Institute for Open and Transdisciplinary Research Initiatives, The University of Osaka 1 , Suita, Osaka 565-0871,