Phase-modulated GST metasurfaces: Polarization-independent ultra-broadband absorbers and switchable photonic devices beyond amplitude modulation

D Dingbang Liu S Shuai Wang G Guanzhou Lin (Fujian Provincial Key Laboratory of Oceanic Information Perception and Intelligent Processing, School of Ocean Information Engineering, Jimei University 3 , Xiamen 361021,) L Lijun Ma M Mingyao Gao (National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,) Y Yunhao Cao (National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,) H Hongshun Sun (National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,) Y Yusa Chen D Dingyi Yang (Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Department of Advanced Materials and Nanotechnology, Academy of Advanced Interdisciplinary Research, Xidian University) W Wengang Wu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,)

Abstract

We demonstrate a phase-modulation paradigm for metasurface perfect absorbers that fundamentally differs from conventional amplitude-control approaches. By strategically arranging crystalline germanium–antimony–tellurium (c-GST) disk meta-atoms with π-phase-shifted reflection characteristics in a fourfold rotational symmetry configuration, we achieve polarization-insensitive ultra-broadband absorption averaging 96.6% (peaking >99%) across the 1000–1600 nm spectrum. Capitalizing on the dramatic optical contrast between amorphous and crystalline GST phases, we further develop dual-mode photonic switches: (1) a polarization-independent switch maintaining >2.5 contrast ratio throughout the band, reaching a record 43.6 at specific wavelengths; (2) a polarization-tunable switch, enabling dynamic spectral control, where peak contrast ratios shift from 36@1278 nm (TM) to 14@1090 nm (TE). The subwavelength thickness (300 nm) of all meta-atoms ensures CMOS-compatible fabrication potential, while the phase-reconfiguration mechanism provides more degrees of freedom for multifunctional photonic integration.

Article Details

Volume / Issue Vol. 127, Issue 5
Published August 04, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

D

Dingbang Liu

S

Shuai Wang

G

Guanzhou Lin

Fujian Provincial Key Laboratory of Oceanic Information Perception and Intelligent Processing, School of Ocean Information Engineering, Jimei University 3 , Xiamen 361021,

L

Lijun Ma

M

Mingyao Gao

National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,

Y

Yunhao Cao

National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,

H

Hongshun Sun

National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,

Y

Yusa Chen

D

Dingyi Yang

Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Department of Advanced Materials and Nanotechnology, Academy of Advanced Interdisciplinary Research, Xidian University

W

Wengang Wu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology 1 , Beijing 100871,