Perpendicularly magnetized synthetic antiferromagnetic Mn<i>x</i>Ga/Co2FeAl bilayers on MgAl2O4 substrate
Abstract
Magnetic tunneling junctions (MTJs) with MgAl2O4 (MAO) barrier exhibit large tunnel magnetoresistance, comparable to that of MgO barrier. In this study, we grow synthetic antiferromagnetic MnxGa/Co2FeAl (CFA) bilayers on MAO (001) substrates without any buffer layer, where the MnxGa layer includes D022-Mn3Ga and L10-MnGa phases. Our results indicate that the CFA forms antiferromagnetic coupling with both D022-Mn3Ga and L10-MnGa. Moreover, we observe the perpendicular magnetic anisotropy (PMA) in both L10-MnGa/CFA and D022-Mn3Ga/CFA bilayers, which is induced by tetragonal MnxGa and interfacial magnetic coupling. Particularly, the L10-MnGa(10 nm)/CFA(1.5 nm) bilayer exhibits a perpendicular anisotropy field of 72.08 kOe and a perpendicular anisotropy energy of 7.57 × 106 erg/cm3. Similar PMA is also observed in L10-MnGa/Co2MnAl and L10-MnGa/Co2FeGa bilayers on MAO substrates. These results provide a foundation for the development of high-performance perpendicular MTJs with MAO barrier.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
Rongkun Han
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , P.O. Box 912, Beijing 100083,
Fengyue He
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , P.O. Box 912, Beijing 100083,
Dong Pan
Dahai Wei
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Jianhua Zhao