Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer
Abstract
In this work, a NiO/β-Ga2O3 heterojunction diode with an ultrathin (∼2 nm) amorphous boron nitride (a-BN) interfacial layer (IL) is presented. The NiO/a-BN/β-Ga2O3 heterojunction diode exhibited a lower turn-on voltage and a higher forward current, thereby reducing the power dissipation, compared to the NiO/β-Ga2O3 diode without an a-BN IL. It is also found that the a-BN IL reduces the interface states, leading to the improvement of the operational reliability after bias stress and reverse blocking characteristics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Dongbin Kim
Jongsu Baek
School of Electrical Engineering, KAIST 1 , Daejeon 34141,
Daehyun Kang
Dahee Seo
School of Electrical Engineering, KAIST 1 , Daejeon 34141,
Wookyung Jeon
Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,
Youngkwan Cho
School of Electronics and Information Engineering and Interdisciplinary Program in Space Systems Engineering, Korea Aerospace University 3 , Goyang 10540,
Hyoung Woo Kim
Myunghun Shin
School of Electronics and Information Engineering and Interdisciplinary Program in Space Systems Engineering, Korea Aerospace University 3 , Goyang 10540,
Yohan Yoon
Department of Materials Engineering, Korea Aerospace University 2 , Goyang-city, Gyeonggi-do 10540,
Byung Jin Cho