Performance enhancement and defect evolution in β-Ga2O3 Schottky barrier diodes induced by 170 keV proton irradiation
Abstract
The radiation effect of electrical performance and defect evolution in n-type β-Ga2O3 Schottky barrier diodes (SBDs) were investigated using 170 keV proton irradiation. Results show that J–V characteristics exhibit a reduction in turn-on voltage and an evident enhancement in forward current density along with an increase in carrier concentration, induced by irradiation. In combination with deep level transient spectroscopy (DLTS) characterization, it is observed that an evolution of intrinsic defects is primarily related to proton-implantation. In transient spectra, the strength of peak E1 (Ec − 0.46 eV) is significantly reduced, while that of peak E2 (Ec − 0.60 eV) is enhanced. Therefore, the evolution of defects is inevitably attributed to the energy loss and dynamic collision of incident protons, which is supported by the characterization of x-ray photoelectron spectroscopy. Based on our built-in defect database of β-Ga2O3, it is inferred that E1 represents divacancy VGaII − VOII or VGaI − VOI and E2 represents trivacancy VGaII − 2VOII, VGaI − 2VOII, or VGaI − 2VOIII. Because of a much deeper charge transition level for majority carriers far from conduction band, DLTS cannot detect the carrier release of hydrogen-passivated gallium vacancies at finite temperature. We found that low-energy proton irradiation can enhance the electrical performance of β-Ga2O3 SBDs, whose physical mechanism is clearly elucidated through hydrogen-promoted defect evolution.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Xinrui Xu
Key Laboratory of Mesoscopic Chemistry, State Key Laboratory of Analytical Chemistry for Life Sciences, State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering
Xiaodong Xu
Jinhong Liu
Yuanting Huang
Key Laboratory of Drug‐Targeting and Drug Delivery System of the Education Ministry West China School of Pharmacy Sichuan University Chengdu China
Weiqi Li
Shangli Dong
Technology Innovation Center of Materials and Devices at Extreme Environment, School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001,
Song Zhang
Jianqun Yang
Technology Innovation Center of Materials and Devices at Extreme Environment, School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001,
Xingji Li
Technology Innovation Center of Materials and Devices at Extreme Environment, School of Materials Science and Engineering, Harbin Institute of Technology 1 , Harbin 150001,