Patch antenna enhanced charge-sensitive infrared phototransistors

Abstract

Charge-sensitive infrared phototransistors (CSIP) constitute an outstanding technology for mid-infrared detection with sensitivities demonstrated at the single photon level. Here, we report on the performances of CSIP detectors operating at a wavelength λ = 8.9 μm that are integrated into double-metal patch antenna resonators. In order to build such devices, we have developed a fabrication protocol that allows accommodating the phototransistor architecture with the double-metal geometry providing very strong electromagnetic field confinement. We observe minimal photon fluxes in the order of 7000 photons/s.μm2 that are 103 smaller with respect to previous realizations of devices with similar absorbing regions in a mesa geometry. This work opens additional perspectives for building ultra-small area devices, as required for single photon counters, while keeping high quantum absorption efficiencies.