Passivation of antimony vacancies by Al3+ ions and anode interface modification for enhancing the efficiency of Sb2Se3 thin-film solar cells
Abstract
Vacancies of Se and Sb are the most detrimental deep-level defects in the Sb2Se3 film. Herein, an approach is proposed to passivate the Sb vacancies using Al3+ ions. The tris(8-hydroxy-quinolinato) aluminum (Alq3) is employed as the Al3+ source, which is buried between indium tin oxide (ITO) and Sb2Se3. Additionally, the incorporation of the Alq3 layer not only inhibits the chemical reaction between Sb2Se3 and ITO but also lowers the contact barrier. As a result, the open-circuit voltage increases from 0.34 to 0.43 V, and the power conversion efficiency rises from 3.3% to 5.1%. Notably, our finding confirms that the grain boundary in the Sb2Se3 film with (020) preferred orientation is harmless and does not induce significant carrier recombination. The device is fabricated by conventional vacuum thermal evaporation. This study offers insights into enhancing the efficiency of Sb2Se3 solar cells.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Yi Xiang
Xin-Yi Dong
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education 1 , Dalian 116024,
Hao-Jie Ma
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education 1 , Dalian 116024,
Meng Xu
Chuan-Hui Cheng
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education 1 , Dalian 116024,
Yanhan Ren
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education 1 , Dalian 116024,
Junfeng Gao
Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, China.
Jing Leng
Wenming Tian
State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhong Shan Road, Dalian 116023, P. R. China
Rongrong Cui
Shengye Jin
State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics
Zhiguang Sun
Instrumental Analysis Center, Dalian University of Technology 4 , Dalian 116024,
Jingyi Xiao
Tianming Lv
Instrumental Analysis Center, Dalian University of Technology 4 , Dalian 116024,
Yong-Chang Han
Department of Physics, Dalian University of Technology 3 , Dalian 116024,