Origins and correction of secondary peaks in timing jitter of high-speed superconducting nanowire single-photon detectors

D Dianpeng Wang Y You Xiao Z Zhen Wan (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) C Chaomeng Ding (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) H Hongxin Xu J Jia Huang J Jiamin Xiong (Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) L Lixing You H Hao Li

Abstract

Superconducting nanowire single-photon detectors (SNSPDs) offer high detection speeds and excellent timing resolution, enabling numerous applications such as high-speed quantum communication and deep-space laser communication. However, at high count rates, timing jitter histograms deviate from a Gaussian profile and exhibit prominent secondary peaks, degrading jitter performance metrics such as full width at 10% maximum and full width at 1% maximum. This work identifies two distinct physical origins of these secondary peaks: multiphoton responses within a single excitation pulse and pulse pileup accompanied by time walk at high repetition rates. By experimentally isolating these mechanisms and applying corresponding statistical time-offset corrections, a near-Gaussian jitter distribution is restored. These results clarify the physics of secondary peaks in SNSPDs and provide a route to achieving simultaneous high counting rates and low timing jitter.

Article Details

Volume / Issue Vol. 128, Issue 16
Published April 20, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

D

Dianpeng Wang

Y

You Xiao

Z

Zhen Wan

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

C

Chaomeng Ding

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

H

Hongxin Xu

J

Jia Huang

J

Jiamin Xiong

Shanghai Key Laboratory of Superconductor Integrated Circuit Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

L

Lixing You

H

Hao Li