Origin of spin–orbit torques and spin transport in Pt/Co/Cu/NiFe/Cu/capping multilayers
Abstract
Spin–orbit torque (SOT) enables efficient current-driven control of magnetization, offering a promising pathway toward low-power spintronic devices. However, the origin of both damping-like (DL) and field-like (FL) SOTs and associated spin transport in complex multilayers remain unclear. Here, we investigated the dependence of SOT efficiencies on NiFe thickness within Ta/Pt/Co/Cu/xNiFe/Cu/Capping multilayers (x = 1–5 nm; Capping = Pt, Al, and SiO2). By employing a spin rotation geometry, the perpendicularly magnetized Pt/Co/Cu stacks serve as a spin source introducing an unconventional spin polarization orthogonal to the Oersted field, eliminating its contribution and enabling unambiguous extraction of SOTs using planar Hall and polar magneto-optic Kerr effect measurements. To distinguish bulk and interfacial contributions, we introduce a sample-area-normalized moment m = mNiFe/S, accounting for thickness-dependent magnetization and eliminating uncertainties arising from nominal thickness scaling and magnetic dead layers. We find that DL-SOT follows nearly linear 1/m scaling, consistent with rapid spin absorption at the Cu/NiFe interface but exhibits finite βSOT when 1/m approaches zero in both Pt- and Al-capped samples, indicating additional interfacial spin-current contributions at Cu/Pt and Cu/Al interfaces. In contrast, SiO2-capped samples show negligible interfacial contributions. Furthermore, FL-SOT deviates markedly from 1/m scaling, indicating a significantly longer spin dephasing length (∼1.7 nm) and thus more extended propagation of the spin currents responsible for FL-SOT in NiFe than for DL-SOT. Comparative capping-layer studies further corroborate this behavior through interface-dependent spin transport. Our findings clarify the origin of DL and FL torques and spin-transport processes, providing guidelines for engineering interfacial spin–orbit functionalities in ultrathin metallic heterostructures.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Yuming Bai
Rulin Tian
School of Integrated Circuits, Huazhong University of Science and Technology , Wuhan 430074,
Yue Zhang
Tao Wang