On the origin of carrier loss in Mg-doped N-polar GaN
Abstract
The neutral (VN-3MgGa)0 complex was found to be the primary compensator in Mg-doped N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ∼1019 cm−3. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration (NA), suggesting that a significant fraction of Mg atoms was incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of (VN-3MgGa)0 complexes as the primary cause for the observed carrier loss.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Masahiro Kamiyama
Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695,
Shashwat Rathkanthiwar
Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695,
Cristyan E. Quiñones
Department of Materials Science and Engineering, North Carolina State University 1 , Raleigh, North Carolina 27695,
Seiji Mita
Adroit Materials 2 , 2054 Kildaire Farm Rd., Cary, North Carolina 27518,
Dolar Khachariya
Adroit Materials 2 , 2054 Kildare Farm Road, Cary, North Carolina 27518,
Pramod Reddy
Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,
Ronny Kirste
Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,
Ramón Collazo
Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,
Zlatko Sitar
Department of Materials Science and Engineering, North Carolina State University 3 , Raleigh, North Carolina 27695,