On-chip integration and strong coupling between ScAlN thin-film surface acoustic wave resonators and superconducting qubits

J Junfeng Chen X Xiaoliang He (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) W Wanpeng Gao (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) X Xiaoyu Liu (Optogenetics & Synthetic Biology Interdisciplinary Research Center, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Pharmacy, East China University of Science and Technology, 130 Mei Long Road, Shanghai 200237, China) Z Zhengqi Niu (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Science 3 , Shanghai 200050,) K Kuang Liu (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,) W Wei Peng (Andlinger Center for Energy and the Environment, Princeton University) Z Zhen Wang Z Zhi-Rong Lin (State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Science 3 , Shanghai 200050,)

Abstract

Thin-film surface acoustic wave (SAW) devices exhibit high quality factors and are promising candidates for quantum transducers, with significant potential for on-chip integration with high-coherence superconducting quantum circuits and optical resonators. However, the experimental demonstration of strong coupling between thin-film SAWs and superconducting qubits in the quantum regime remains a considerable challenge. In this study, we demonstrate strong coupling between a ScAlN thin-film SAW resonator and a high-coherence qubit on the same substrate, where the enhanced qubit coherence was achieved through selective ScAlN etching. Distinct multimode anticrossings are observed in both the qubit and SAW resonator frequency spectra, with extracted coupling strengths closely matching theoretical predictions. Additionally, we investigate qubit decay and the dissipation properties of the SAW resonator in the SAW-qubit hybrid system. Our results confirm the feasibility of integrating thin-film SAW devices with high-coherence superconducting circuits and offer valuable insights for optimizing the performance of such hybrid systems.

Article Details

Volume / Issue Vol. 126, Issue 14
Published April 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

J

Junfeng Chen

X

Xiaoliang He

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

W

Wanpeng Gao

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

X

Xiaoyu Liu

Optogenetics & Synthetic Biology Interdisciplinary Research Center, Shanghai Frontiers Science Center of Optogenetic Techniques for Cell Metabolism, School of Pharmacy, East China University of Science and Technology, 130 Mei Long Road, Shanghai 200237, China

Z

Zhengqi Niu

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Science 3 , Shanghai 200050,

K

Kuang Liu

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 1 , Shanghai 200050,

W

Wei Peng

Andlinger Center for Energy and the Environment, Princeton University

Z

Zhen Wang

Z

Zhi-Rong Lin

State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Science 3 , Shanghai 200050,