On-board calibrated radio-frequency measurement at cryogenic temperatures for determination of SrTiO3-based capacitor properties

A Akitomi Shirachi (Research Institute of Electrical Communication, Tohoku University 1 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,) M Motoya Shinozaki Y Yasuhide Tomioka H Hisashi Inoue (National Institute of Advanced Industrial Science and Technology (AIST) 4 , 1-1-1 Higashi, Tsukuba 305-8565,) K Kenta Itoh (Faculty of Science and Engineering, Waseda University 5 , 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555,) Y Yusuke Kozuka T Takanobu Watanabe (Faculty of Science and Engineering, Waseda University 5 , 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555,) S Shoichi Sato (WPI Advanced Institute for Materials Research, Tohoku University 3 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,) T Takeshi Kumasaka T Tomohiro Otsuka

Abstract

Quantum computing has emerged as a promising technology for next-generation information processing, utilizing semiconductor quantum dots as one of the candidates for quantum bits. Radio-frequency (rf) reflectometry plays an important role in the readout of quantum dots but requires a precise rf measurement technique at cryogenic temperatures. While cryogenic calibration techniques, essential for rf reflectometry, have been developed, on-board calibration near the device remains an important challenge. In this study, we develop an on-board calibrated rf measurement system operating at 4 K for characterizing SrTiO3-based varactors, which are promising components for tunable impedance matching circuits. Our system enables accurate measurements by eliminating errors associated with long rf circuit lines. We investigate the effects of annealing conditions, crystal orientation, and Ca doping of SrTiO3 crystals on the varactor properties in the frequency range for rf reflectometry. Our results provide insights for optimizing these components for cryogenic rf applications in quantum information processing systems.

Article Details

Volume / Issue Vol. 127, Issue 15
Published October 13, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

A

Akitomi Shirachi

Research Institute of Electrical Communication, Tohoku University 1 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,

M

Motoya Shinozaki

Y

Yasuhide Tomioka

H

Hisashi Inoue

National Institute of Advanced Industrial Science and Technology (AIST) 4 , 1-1-1 Higashi, Tsukuba 305-8565,

K

Kenta Itoh

Faculty of Science and Engineering, Waseda University 5 , 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555,

Y

Yusuke Kozuka

T

Takanobu Watanabe

Faculty of Science and Engineering, Waseda University 5 , 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555,

S

Shoichi Sato

WPI Advanced Institute for Materials Research, Tohoku University 3 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,

T

Takeshi Kumasaka

T

Tomohiro Otsuka