Observation of conflicting Seebeck coefficient and Hall coefficient in Sb-doped MnBi4Te7 crystals

Y Yinong Yin (Department of Physics, Beijing Technology and Business University 1 , Beijing 100048,) Y Yan Zhang Y Yutian Lang (Department of Physics, Beijing Technology and Business University 1 , Beijing 100048,) D Dan Liu J Jiazheng Hao (Spallation Neutron Source Science Center) L Lunhua He G Guoqiang Liu (Department of Biological Sciences, Boler-Parseghian Center for Rare Diseases, Harper Cancer Research Institute, University of Notre Dame) X Xiaojian Tan (Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 , Zhejiang 315201,) J Jun Jiang (State Key Laboratory of Precision and Intelligent Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, School of Chemistry and Materials Science)

Abstract

In the past decades, great efforts have been devoted to designing and developing high-efficiency thermoelectric (TE) materials due to the increasing demands in the fields of power generation, cooling, and sensing. Given that the developments of TE materials based on charge and phonon engineering are facing a plateau, the manipulation of spin degree of freedom has been considered as an innovative strategy to further improve the TE performance, which has drawn growing attention in recent years. In this work, we studied the thermoelectric transport properties of Sb-doped MnBi4Te7 crystals, which contain the Bi2Te3 layers for charge transport and MnTe layers for spins. We observed abnormally low thermopower in the crystals with Sb doping ratios of 0.25 and 0.35, and the sign of thermopower is contradictory to the Hall coefficient. Further experiments evidenced magnetic field-enhanced thermopower and electrical resistivity over a wide temperature range, which support a spin-driven thermoelectric mechanism. An explanation based on the interplay between the spin and heat in entropy transport via charged carriers is proposed.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Y

Yinong Yin

Department of Physics, Beijing Technology and Business University 1 , Beijing 100048,

Y

Yan Zhang

Y

Yutian Lang

Department of Physics, Beijing Technology and Business University 1 , Beijing 100048,

D

Dan Liu

J

Jiazheng Hao

Spallation Neutron Source Science Center

L

Lunhua He

G

Guoqiang Liu

Department of Biological Sciences, Boler-Parseghian Center for Rare Diseases, Harper Cancer Research Institute, University of Notre Dame

X

Xiaojian Tan

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 , Zhejiang 315201,

J

Jun Jiang

State Key Laboratory of Precision and Intelligent Chemistry, Hefei National Research Center for Physical Sciences at the Microscale, School of Chemistry and Materials Science