Nonvolatile spin logic-in-memory strategy by fully electrically multistate modulation in two-dimensional A-type antiferromagnets

Abstract

Achieving spin logic-in-memory computing architectures by full-electrical higher-order multistate modulation at the nanoscale is highly pursued in next-generation energy-efficient information technology. However, this currently remains a formidable obstacle. Based on first-principles calculations, integrating A-type antiferromagnetic bilayer-FeCl2 within two ferroelectric Sc2CO2 structures achieves high-efficiency multistate storage and spin logic-in-memory functions. Antiferromagnetic bilayer-FeCl2 exhibits four distinct electronic states controlled by the FE polarization of Sc2CO2 sublayers due to interfacial charge reconstruction. Accordingly, the proposed Sc2CO2/bilayer-FeCl2/Sc2CO2 multiferroic device enables four distinct resistance states controlled by FE polarization and bias voltage, accompanied by 100% spin-polarized currents and a tremendous tunneling electroresistance ratio of 1.9 × 1013%. On this basis, fully electrically driven writing and reading of spin states coupled with multiple spin logic functions (NOR, AND, and XNOR) are observed. This work provides viable avenues for fusing storage and computing functions in a single multiferroic device.