Nonradiative quenching of EPR signals in germanium-doped AlGaN: Evidence for <i>DX</i>-center formation

J Jason Forbus (Department of Physics, University of Alabama at Birmingham 1 , Birmingham, Alabama 35233,) D Darshana Wickramaratne (Center for Computational Materials Science, US Naval Research Laboratory 2 , Washington, DC 20375,) J John L. Lyons (United States Naval Research Laboratory 2 , Washington, DC 20375,) M M. E. Zvanut (Department of Physics, University of Alabama at Birmingham 1 , Birmingham, Alabama 35233,)

Abstract

We present photo-electron paramagnetic resonance (EPR) measurements and first-principles calculations that indicate germanium (Ge) is a DX center in AlGaN. Our photo-EPR measurements on Ge-doped AlGaN samples show no EPR spectra in the dark, while persistent EPR spectra are observed upon photoexcitation with photon energies greater than ∼1.3 eV. Thermally annealing the samples decreased the EPR signal, with the critical temperature to quench the EPR signal being larger in the lower Al-content sample. Using detailed first-principles calculations of Ge in AlGaN, we show all of these observations can be explained by accounting for the DX configuration of Ge in AlGaN.

Article Details

Volume / Issue Vol. 126, Issue 4
Published January 27, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

J

Jason Forbus

Department of Physics, University of Alabama at Birmingham 1 , Birmingham, Alabama 35233,

D

Darshana Wickramaratne

Center for Computational Materials Science, US Naval Research Laboratory 2 , Washington, DC 20375,

J

John L. Lyons

United States Naval Research Laboratory 2 , Washington, DC 20375,

M

M. E. Zvanut

Department of Physics, University of Alabama at Birmingham 1 , Birmingham, Alabama 35233,