Negative spin Hall magnetoresistance in Mn3Ir/Co bilayers induced by interfacial spin-orbit coupling

Z Ze Yan (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) Q Quanzhi Zhang (Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,) J Jianrong Zhang L Li Xi W Wenbo Sui (Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,) D Desheng Xue (Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,) D Dezheng Yang (Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,)

Abstract

Understanding the interconversion between charge current and spin current in antiferromagnetic materials is crucial for advancing antiferromagnetic spintronic devices. In this work, we utilize the second harmonic technique and the spin Hall magnetoresistance method to investigate the spin current generation in Mn3Ir/Co bilayers. The angular dependence of the second harmonic Hall voltage shows that only a y-polarized spin current is generated, which exerts spin–orbit torques on Co magnetic moments. Contrary to the positive spin Hall magnetoresistance induced by y-polarized spin current, we observe the anomalous negative spin Hall magnetoresistance in Mn3Ir/Co bilayers. By further investigating the Mn3Ir thickness dependence of the negative spin Hall magnetoresistance and spin–orbit torque, we demonstrate that the negative spin Hall magnetoresistance originates from the interconversion between charge current and spin current driven by interfacial spin–orbit coupling. Our findings provide compelling evidence for interfacial spin–orbit coupling conversion at the antiferromagnetic/ferromagnetic bilayer interface. This indicates that the interface engineering is essential for optimizing noncollinear antiferromagnetic spintronic devices.

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Z

Ze Yan

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

Q

Quanzhi Zhang

Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,

J

Jianrong Zhang

L

Li Xi

W

Wenbo Sui

Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,

D

Desheng Xue

Key Laboratory of Magnetism and Magnetic Functional Materials (Lanzhou University), Ministry of Education 1 , Lanzhou 730000,

D

Dezheng Yang

Key Laboratory for Magnetism and Magnetic Functional Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University , Lanzhou,