Negative differential photoresistance for optically tunable resonator in a 2D Nb3I8 tunnel junction

H Hanchen Liu Y Yao Wang J Jiaxin Wu J Junning Mei (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) Q Qi Sun Y Yu Chen S Shuangxing Zhu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) K Kenji Watanabe T Takashi Taniguchi X Xinghan Cai (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University)

Abstract

Negative differential resistance (NDR) offers a compact route to sustain and condition radio frequency resonators, and is also exploited in logic and neuromorphic circuits. However, electrically tunable NDR commonly trades tunability for circuit complexity, area, and power, constraining practical integration and fast reconfigurability. Here, we demonstrate optical control of negative differential photoresistance (NDPR) in a vertical two-dimensional tunnel junction based on Nb3I8 tunnel barrier. Under illumination, the photocurrent rises with bias and then falls beyond a threshold, forming a clear NDPR region. The effective negative photoresistance is continuously tuned by light power, and wavelength, spanning ∼−1 to −17 MΩ within our measurement window, while the device, as a photodetector, retains high sensitivity (responsivity up to ∼0.49 AW−1). Wavelength-dependent measurements indicate multiple photocurrent-generation pathways and suggest that the NDPR onset correlates with the Nb3I8's band structure. We further carry out simulations by integrating a lumped NDPR element into an LC oscillator circuit, which yields self-oscillation and effectively enhances the resonator quality factors. These results establish adjustable NDPR in a 2D van der Waals tunneling platform and enable light-programmable impedance for reconfigurable optoelectronics, suggesting promising potential for all-optical communication systems.

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

H

Hanchen Liu

Y

Yao Wang

J

Jiaxin Wu

J

Junning Mei

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

Q

Qi Sun

Y

Yu Chen

S

Shuangxing Zhu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

K

Kenji Watanabe

T

Takashi Taniguchi

X

Xinghan Cai

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University