Nanoionics driven reconfigurable heterojunctions for advanced information devices

Abstract

Emerging fields such as autonomous driving, smart manufacturing, and artificial intelligence impose greater demands on electronic information devices in terms of versatility, power consumption, and integration density. Multi-field-induced ion migration has led to the identification of reconfigurable heterojunction devices as potential candidates for next-generation information devices due to their rich physical property modulation capabilities, which exceed those of conventional devices. This Perspective will discuss multi-field-induced ionic and electronic processes, including ion migration, charge trapping, and spin polarization in heterojunction devices with reconfigurable conductance. Applications such as ultrahigh-density memory, in-memory computing, encryption, neuromorphic computing, and perception are also summarized. Finally, current challenges and opportunities for reconfigurable heterojunctions are prospected.