Mott insulators appearing at a thickness period corresponding to nesting in CaRuO3

M M. Sakoda (Department of Applied Physics, Graduate School of Engineering, Hokkaido University 1 , Sapporo 060-8628, Hokkaido,) H H. Nobukane (Department of Physics, Graduate School of Science, Hokkaido University 2 , Sapporo 060-0810, Hokkaido,) S S. Shimoda (Institute for Catalysis, Hokkaido University 3 , Sapporo 001-0021, Hokkaido,) K K. Ichimura (Department of Applied Physics, Graduate School of Engineering, Hokkaido University 1 , Sapporo 060-8628, Hokkaido,)

Abstract

In 2021, we discovered a novel size effect with a period of 25 Å on strongly correlated compound CaRuO3. The change in film thickness of only one nanometer leads to an increase in electrical resistivity at 4 K by a factor of several Billion. However, the excitation energy of 2.14 eV on insulating CaRuO3 is too large to explain the mechanism by conventional quantum well. In this study, we clarify that the increases in electrical resistivity are accompanied by lattice expansion and caused by the Mott transitions. We measured in-plane x-ray diffraction on CaRuO3 films and found a 24.8 Å periodic thickness oscillation of the lattice spacing d(004). We determined the nesting vector from the Fermi surface and revealed the spin density wave with a period equivalent to the size effect. We concluded that the antiferromagnetic correlation appearing in the boundary conditions triggers the periodic Mott insulators depending on the film thickness.

Article Details

Volume / Issue Vol. 126, Issue 18
Published May 05, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

M

M. Sakoda

Department of Applied Physics, Graduate School of Engineering, Hokkaido University 1 , Sapporo 060-8628, Hokkaido,

H

H. Nobukane

Department of Physics, Graduate School of Science, Hokkaido University 2 , Sapporo 060-0810, Hokkaido,

S

S. Shimoda

Institute for Catalysis, Hokkaido University 3 , Sapporo 001-0021, Hokkaido,

K

K. Ichimura

Department of Applied Physics, Graduate School of Engineering, Hokkaido University 1 , Sapporo 060-8628, Hokkaido,