MoS2 field-effect transistors gated with quasi-1D metallic TaSe3 crystal

Abstract

The extensive exploration of two-dimensional (2D) materials for field-effect transistors (FETs) scaling has imposed stringent requirements on next-generation interconnects with excellent electrical reliability. In this work, we investigated the electrical transport properties of metallic TaSe3 crystals, which possess a typical quasi-1D van der Waals (vdW) atomic structure. Our findings establish quasi-1D TaSe3 as a promising interconnect material for 2D electronics. It demonstrates dimension-independent resistivity and high current-carrying capacity, with a maximum breakdown current density exceeding 9 MA cm−2 and an average resistivity of 494 μΩ cm remaining stable with feature sizes down to ∼20 nm. Gated with atomic-thin TaSe3 nanobelts, the MoS2 FET with a short gate length delivers a remarkable on/off current ratio surpassing 107 and a subthreshold swing of 90 mV dec−1, and the inverter shows rapid inversion behavior with a high voltage gain of 7 at VDD = 2 V. These findings demonstrate the significant promise of quasi-1D vdW metallic TaSe3 crystal for advancing future logic circuit interconnection.