Molecular engineering of PEDOT:PSS for enhancing open-circuit voltage in organic/silicon heterojunction solar cells

L Leiming Yu (School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University 1 , Xinxiang,) R Rui Yang X Xiangdong Duan (School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University , Xinxiang 453007,) Z Zhuo Wu S Suicai Zhang (School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University 1 , Xinxiang,) X Xiaohui Song Y Yurong Jiang C Congxin Xia (School of Materials Science and Engineering, Henan Engineering Research Center for Flexible Composite and Intelligent Devices)

Abstract

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS)/silicon (Si) heterojunction solar cells (HSCs) have garnered extensive interest owing to their potential for high efficiency and low cost. However, their performance is constrained by a limited open-circuit voltage (VOC). In this manuscript, PEDOT:PSS films endowed with both high conductance and high work function via an alcohol-doping-based molecular engineering strategy were applied to induce strong inversion layers on the n-Si surface and generate large built-in voltage in HSCs. This molecular engineering strategy enables precise modulation of PEDOT:PSS molecular building blocks, achieving a work function tuning range from 4.81 to 4.93 eV while retaining high conductivity exceeding 650 S/cm. A photovoltaic device with alcohol-doped PEDOT:PSS delivers a large VOC of 0.66 V without additional modifications and a power conversion efficiency of 12.80%. This study on the molecular engineering of PEDOT:PSS establishes an effective and simplified pathway for fabricating PEDOT:PSS/Si HSCs with high VOC.

Article Details

Volume / Issue Vol. 127, Issue 26
Published December 29, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

L

Leiming Yu

School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University 1 , Xinxiang,

R

Rui Yang

X

Xiangdong Duan

School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University , Xinxiang 453007,

Z

Zhuo Wu

S

Suicai Zhang

School of Physics, Henan Key Laboratory of Advanced Semiconductor & Functional Device Integration, Henan Normal University 1 , Xinxiang,

X

Xiaohui Song

Y

Yurong Jiang

C

Congxin Xia

School of Materials Science and Engineering, Henan Engineering Research Center for Flexible Composite and Intelligent Devices