Mitigation energy loss with fullerene derivatives doping regulation for efficient tin perovskite solar cells

F Fang Xiang Z Zhenzhu Zhao (Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China) Y Yue Zhang B Baoyuan Zhang H Hao Xu Y Yuan Li J JunTao Hu F Fan Xu (CAS Key Laboratory of Colloid, Interface and Thermodynamics) M Mulin Sun (School of Microelectronics, University of Science and Technology of China 1 , Hefei 230026,) H Huimin Meng (School of Microelectronics, University of Science and Technology of China 1 , Hefei 230026,) L Lijuan Huang Y Yu Li J Junfa Zhu (National Synchrotron Radiation Laboratory) X Xuechen Jiao (National Synchrotron Radiation Laboratory) S Shangfeng Yang Q Qin Hu

Abstract

Halide tin-based perovskites have gradually emerged as one of the most competitive candidates for lead-free perovskite photovoltaics owing to their superior optoelectronic properties and low toxicity. However, substantial energy losses limit the device performance of tin-based perovskite solar cells (TPSCs). Herein, we developed a regulation doping strategy that effectively reduces device energy loss by introducing perfluoroalkyl and pyridine-functionalized fullerene derivatives (C60-PyF15) as a regulating intermediary. This strategy successfully optimizes the energy level alignment, accelerates carrier extraction at the perovskite/transport layer interface, and reduces non-radiative recombination. Additionally, it mitigates the oxidation of Sn2+, increases the crystallinity, and passivates the perovskite by suppressing its intrinsic defects. Consequently, the open-circuit voltage (VOC) of the TPSCs is markedly improved, leading to a champion power conversion efficiency of 13.72%, corresponding to a relative improvement of over 20% compared to the control device (11.41%). This work offers a novel strategy to address energy loss issues, providing valuable insights for fabricating more efficient and stable TPSCs.

Article Details

Volume / Issue Vol. 128, Issue 14
Published April 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (16)

F

Fang Xiang

Z

Zhenzhu Zhao

Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China

Y

Yue Zhang

B

Baoyuan Zhang

H

Hao Xu

Y

Yuan Li

J

JunTao Hu

F

Fan Xu

CAS Key Laboratory of Colloid, Interface and Thermodynamics

M

Mulin Sun

School of Microelectronics, University of Science and Technology of China 1 , Hefei 230026,

H

Huimin Meng

School of Microelectronics, University of Science and Technology of China 1 , Hefei 230026,

L

Lijuan Huang

Y

Yu Li

J

Junfa Zhu

National Synchrotron Radiation Laboratory

X

Xuechen Jiao

National Synchrotron Radiation Laboratory

S

Shangfeng Yang

Q

Qin Hu