Membrane phononic crystals for high-Qm mechanical defect modes at MHz frequencies in piezoelectric aluminum nitride

A Anastasiia Ciers (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,) L Laurentius Radit Nindito (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,) A Alexander Jung (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,) H Hannes Pfeifer (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,) A Armin Dadgar (Institute of Physics, Otto-von-Guericke-University Magdeburg 2 , 39106 Magdeburg,) A André Strittmatter (Otto-von-Guericke-Universität Magdeburg, Institut für Physik 1 , Universitätsplatz 2, 39106 Magdeburg,) W Witlef Wieczorek (Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,)

Abstract

Nanomechanical resonators with exceptionally low dissipation are advancing mechanics-based sensors and quantum technologies. The key for these advances is the engineering of localized phononic modes that are well-isolated from the environment, i.e., that exhibit a high mechanical quality factor, Qm. Membrane phononic crystals fabricated from strained thin films can realize high-Qm single or multiple localized phononic defect modes at MHz frequencies. These defect modes can be efficiently interfaced with out-of-plane light or coupled to a microwave quantum circuit, enabling readout and control of their motion. When membrane phononic crystals are fabricated from a crystalline film, they could offer built-in functionality. We demonstrate a membrane phononic crystal realized in a strained 90 nm thin film of aluminum nitride (AlN), which is a crystalline piezoelectric material. We engineer a high-Qm localized phononic defect mode at 1.8 MHz with a Qm×fm-product of 1.5×1013 Hz at room temperature. In future devices, the built-in piezoelectricity of AlN can be utilized for direct coupling to qubits or in situ tuning of mechanical mode frequencies, defect mode couplings, or acoustic bandgaps, which can be used as building blocks of tunable phononic circuits or low-noise sensors.

Article Details

Volume / Issue Vol. 126, Issue 25
Published June 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

A

Anastasiia Ciers

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,

L

Laurentius Radit Nindito

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,

A

Alexander Jung

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,

H

Hannes Pfeifer

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,

A

Armin Dadgar

Institute of Physics, Otto-von-Guericke-University Magdeburg 2 , 39106 Magdeburg,

A

André Strittmatter

Otto-von-Guericke-Universität Magdeburg, Institut für Physik 1 , Universitätsplatz 2, 39106 Magdeburg,

W

Witlef Wieczorek

Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology 1 , SE-412 96 Göteborg,