Applied Physics Letters

Measuring carrier lifetimes of an InGaAs/GaAsSb T2SL using an optical phase-shift technique

P P. Petluru (Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) P P. T. Webster (Air Force Research Laboratory, Space Vehicles Directorate 2 , Kirtland AFB, New Mexico 87117,) S S. D. Hawkins (Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,) A A. J. Muhowski (Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,)

Abstract

An optical phase-shift technique is demonstrated to measure the carrier lifetime of an InGaAs/GaAsSb type-II superlattice as a function of excess carrier density, showing good agreement with time-resolved photoluminescence data at low excitation. At 77 K, the minority-carrier lifetime is 369 ns.

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Article Details

Volume / Issue Vol. 129, Issue 4
Published July 27, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (4)

P

P. Petluru

Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

P

P. T. Webster

Air Force Research Laboratory, Space Vehicles Directorate 2 , Kirtland AFB, New Mexico 87117,

S

S. D. Hawkins

Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

A

A. J. Muhowski

Sandia National Laboratories 1 , Albuquerque, New Mexico 87185,

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