Manipulation of the excitonic emission in few-layer CrSBr by magnetic order, strain, and electrostatic doping

J Junyang Chen X Xiaohua Wu (Fudan University Shanghai Cancer Center Shanghai China) M Mingqiang Gu (Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,) S Shoujing Chen (Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,) Y Yujun Zhang Y Yanan Dai Q Qihang Liu Y Yue Zhao M Mingyuan Huang

Abstract

The two-dimensional (2D) magnetic material CrSBr has attracted significant interest for developing spin-based optoelectronic devices due to its unique magneto-optical properties. In this Letter, we report a systematic study on the photoluminescence (PL) of the high-energy excitons in few-layer CrSBr and the associated trions. Besides the broad excitonic emission peak (Xl) at around 1.34 eV, we also observed another strong excitonic emission peak (Xh) at around 1.37 eV in a hBN-encapsulated 2L sample, which splits into two peaks in 3L and more layered samples. The Xh exciton is associated with the transition between the top valence band and the second lowest conduction band, which is forbidden by inversion symmetry in 1L CrSBr. By applying inhomogeneous strain or constructing heterojunction, the Xh exciton can be brightened in 1L samples. In addition, we observed two trions associated with the split Xh excitons in electrostatically doped 3L CrSBr samples. By tuning the CrSBr sample into a ferromagnetic (FM) state, one of the trions shows enhanced intensity, which is more than 40 times that of the original exciton. Our results demonstrate that the excitonic emission in few-layer CrSBr can be effectively manipulated by magnetic order, strain, and electrostatic doping.

Article Details

Volume / Issue Vol. 128, Issue 21
Published May 25, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

J

Junyang Chen

X

Xiaohua Wu

Fudan University Shanghai Cancer Center Shanghai China

M

Mingqiang Gu

Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,

S

Shoujing Chen

Department of Physics, State Key Laboratory of Quantum Functional Materials, and Guangdong Basic Research Center of Excellence for Quantum Science, Southern University of Science and Technology 1 , Shenzhen 518055,

Y

Yujun Zhang

Y

Yanan Dai

Q

Qihang Liu

Y

Yue Zhao

M

Mingyuan Huang