Low-voltage transistor array with dynamic synaptic plasticity for neuromorphic computing
Abstract
This study demonstrates the integrated junctionless indium-tin-oxide transistor arrays for neuromorphic computing, exhibiting remarkable stability and consistency. Stable and dynamic synaptic plasticity is demonstrated by these devices, with both paired pulse facilitation (PPF) and paired pulse depression (PPD) being achieved within a single device. Through the modulation of synaptic weights, the dynamic conversion from PPD to PPF can be realized, thereby enabling multimodal learning and reducing the complexity of the neuromorphic system. The unique ion migration mechanism of chitosan electrolytes enables short-term plasticity and pulse-number-dependent weight modulation. Utilizing these properties, a feedback-enhanced learning model was constructed to emulate spatiotemporal integration of neural signals. The array exhibits excellent scalability, offering a cost-effective solution for large-scale neuromorphic systems. Notably, the controllable switch between inhibition and potentiation modes represents a demonstrated capability in artificial synapse design, holding promise for bioelectronic devices and adaptive sensing applications.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Pengfei Chen
State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry and Chemical Engineering
Wei Dou
Xiaodong Xu
Yuling Peng
School of Physics and Electronics, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices of Hunan Normal University, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Hunan Normal University , Changsha 410081,
Jiangyun Lei
School of Physics and Electronics, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices of Hunan Normal University, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Hunan Normal University , Changsha 410081,
Guanggang Jiang
School of Physics and Electronics, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices of Hunan Normal University, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Hunan Normal University , Changsha 410081,
Guangxiu Zeng
School of Physics and Electronics, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices of Hunan Normal University, Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory of Physics and Devices in Post-Moore Era, College of Hunan Province, Hunan Normal University , Changsha 410081,
Dongsheng Tang
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, Key Laboratory for Multifunctional Ionic Electronic Materials and Devices, College of Physics and Electronics, Hunan Normal University , Changsha 410081, Hunan,