Low voltage and high bandwidth surface-illuminated three-terminal Ge-on-Si APD with multiple biasing configurations
Abstract
In this work, a regulated-voltage biasing configuration is proposed for the Ge-on-Si avalanche photodiode (APD) structure. This design incorporates an extended n-charge layer to decrease the breakdown voltage and optimizes the absorption region thickness to reduce the electron transit time. By applying three electrodes to individually modulate the electric fields in the absorption and avalanche region, respectively, both of low avalanche breakdown voltage (−8.1 V) and high bandwidth (20.4 GHz) of the surface-illuminated detector can be achieved. Meanwhile, the sensitivity of weak light detection is improved to −45 dBm. The responsivity of the APD is 60.76 A/W at 1550 nm when the voltage is biased at −13.5 V. The low voltage and improved bandwidth can meet the requirements for weak light detection and other applications demanding such sensitivity.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (17)
Huan Qu
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 1 , Changchun 130012,
Xuetong Li
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 1 , Changchun 130012,
Xiaobin Liu
Department of Surgery, Translational Research Program in Pediatric Orthopedics, The Children’s Hospital of Philadelphia
Weipeng Wang
School of Life Science and Technology
Yingzhi Li
Baisong Chen
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 1 , Changchun 130012,
Heming Hu
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 1 , Changchun 130012,
Zihao Zhi
State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University 1 , Changchun 130012,
Ziming Wang
Jie Li
Guoqiang Lo
Advance Micro Foundry, Pte Ltd 2 , 11 Science Park Road, Science Park II, Singapore 117685,
Lei Wang
Quanxin Na
Pengcheng Laboratory 4 , Shenzhen 518000,
Xueyan Li
Key Laboratory of Bio-Inspired Smart Interfacial Science and Technology of Ministry of Education, School of Chemistry, Beihang University, Beijing 100191, China
Xiaolong Hu
Qijie Xie
Peng Cheng Laboratory 3 , Shenzhen 518000,
Junfeng Song
Lab of Advanced Materials, College of Smart Materials and Future Energy, Department of Chemistry