Low-power flexible MXene-based resistive random access memory by oxygen plasma

Abstract

With the development of artificial intelligence and flexible electronics, MXene-based memory devices have gained widespread attention due to their excellent performance. However, the traditional MXene-based memory device often requires high-temperature annealing processes, which hinder their application of memory devices in flexible electronics. Here, we demonstrate the use of a one-step process oxygen plasma (O plasma) irradiation process to induce controlled defects for fabricating MXene-based memory devices directly on a flexible polyimide substrate. The resulting memory device exhibits stable resistive switching behavior with a high switching ratio (∼7.8 × 104), low power consumption (∼49.8 nW), excellent retention performance (30 days), and multi-level storage capability. Additionally, the device maintained high stability after multiple bending tests and shows no significant degradation even after three months of ambient exposure without encapsulation. This work provides a viable strategy for developing flexible, high-performance memory device with high controllability.