Low-loss GaN monolithic bidirectional switch via antiparallel connected HEMTs with recessed Schottky drain

Abstract

A low-loss gallium nitride monolithic bidirectional switch (MBDS) is demonstrated by antiparallel connecting two high electron mobility transistors (HEMTs), which feature recessed Schottky-type drain and reverse blocking (RB) property. The RB-HEMT shows a low turn-on voltage (VON) of 0.33 V and a reverse leakage current (ILEAK) of 300 nA/mm. Moreover, the MBDS exhibits outstanding static performance with a low specific ON-resistance (RON,SP) of 1.18 mΩ · cm2, a high saturated current density (Isat) of 380 mA/mm, a breakdown voltage of 425 V, and a high Baliga's figure of merit of 153 MW/cm2. In addition, the MBDS shows highly efficient pulse width modulation as an AC chopper and low switching loss. These results highlight the promise of the proposed MBDS for power conversion applications.