Long-range modulation of skyrmion population by local current injection

S Sneha Yadav (Department of Physics, Indian Institute of Technology (BHU) 1 , Varanasi 221005,) S Satoshi Sugimoto (Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS) 2 , 1-2-1 Sengen, Tsukuba 305-0047,) S Sandip Chatterjee (Department of Physics, Indian Institute of Technology (BHU) 1 , Varanasi 221005,) K Kazuhito Tsukagoshi S Shinya Kasai (Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS) 2 , 1-2-1 Sengen, Tsukuba 305-0047,)

Abstract

The thin-film magnetic skyrmion is designed to interact with each other as nonlinear response, enabling collective magnetic morphology at the nonequilibrium state. We here explore the alternative nonlinear morphology of multiple skyrmions induced by the orthogonal two-current injections for the Pt/Co/Ir multilayer platforms. The global currents induce polarity-dependent driving and accumulation of skyrmions across the whole area of a Hall bar device. Once another local current is injected from a μm width port, dozens of skyrmions follow their polarity manners of the local injection, resulting in total modulations of skyrmion population governed by a pair of two-current polarities. Such massive morphology tuning at the nonlinear region indicates resemblances with a skyrmion Hall effect, where current-induced accumulation and depletion create the nonequilibrium distributions of skyrmions toward Hall deflections. Our findings propose an alternative controlling method of skyrmion population through threshold-like responses.

Article Details

Volume / Issue Vol. 129, Issue 1
Published July 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

S

Sneha Yadav

Department of Physics, Indian Institute of Technology (BHU) 1 , Varanasi 221005,

S

Satoshi Sugimoto

Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS) 2 , 1-2-1 Sengen, Tsukuba 305-0047,

S

Sandip Chatterjee

Department of Physics, Indian Institute of Technology (BHU) 1 , Varanasi 221005,

K

Kazuhito Tsukagoshi

S

Shinya Kasai

Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS) 2 , 1-2-1 Sengen, Tsukuba 305-0047,