Applied Physics Letters

Localized electrothermal annealing for rapid recovery of ambient degradation in indium oxide transistors via COMSOL simulations and experimental characterization

D Dongsun Shin (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) J Jaewook Yoo (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) H Hongseung Lee (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Sojin Jung (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Seongbin Lim (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) M Minah Park (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Seohyeon Park (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) D DongHyeon Lee S Soohyun Lim (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,) S Sieun Lee J Junhui Park T Taewan Kim (Department of Chemistry) K Kiyoung Lee H Hagyoul Bae (Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,)

Abstract

This work reports an electrothermal annealing (ETA) technique based on localized Joule heat for effective recovery of the electrical characteristics of indium oxide (In2O3) thin-film transistors (TFTs) that are degraded by ambient exposure. We investigated the current–voltage (I–V) characteristics, resistance, subthreshold swing, and μFE under three conditions: the initial state, the degraded state after 10 days, and the state after ETA. X-ray photoelectron spectroscopy and subgap density-of-states analyses were conducted to examine variations in oxygen vacancy (VO) quantitatively and thereby demonstrate the effects of ETA. Additionally, COMSOL simulations were performed to elucidate the temperature distribution induced by localized Joule heat and to validate the feasibility of reducing shallow trap states via ETA in In2O3 TFTs.

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Article Details

Volume / Issue Vol. 128, Issue 20
Published May 18, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (14)

D

Dongsun Shin

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

J

Jaewook Yoo

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

H

Hongseung Lee

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Sojin Jung

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Seongbin Lim

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

M

Minah Park

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Seohyeon Park

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

D

DongHyeon Lee

S

Soohyun Lim

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

S

Sieun Lee

J

Junhui Park

T

Taewan Kim

Department of Chemistry

K

Kiyoung Lee

H

Hagyoul Bae

Division of Electronic Engineering, Jeonbuk National University 1 , Jeonju-si 54896,

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