Lithium-doping enhanced WO3 photoanodes: Reduced carrier loss and extended collection length

B Baohan Gao (School of Physical Science and Technology, Lanzhou University 1 , Lanzhou 730000,) J Jia Zhao J Jialin Shao X Xinping Zhai (Research Institute of Microscale Optoelectronics, School of Jia Yang, Zhejiang Shuren University 2 , Shaoxing 312028,) F Fengsong Gao (School of Physical Science and Technology, Key Laboratory of Special Functional Materials and Devices, Ministry of Education, Lanzhou University 1 , Lanzhou 730000,) Y Yujie Wang (Shenyang National Laboratory for Materials Science, Institute of Metal Research) R Rui Hao Z Zemin Zhang

Abstract

Photoelectrochemical (PEC) solar-fuel conversion represents a promising approach for efficiently capturing and storing solar energy. WO3 is extensively utilized as a PEC photoanode, but its performance is constrained by small polaron hopping dominated carrier losses. This study comprehensively investigates the enhancement of WO3 photoanode performance through lithium (Li)-doping. The results demonstrate that Li-doping significantly enhances charge mobility and reduces charge transfer resistance, thereby enabling a photocurrent of 0.98 mA cm−2 at 1.4 V vs RHE, 2.51-fold larger than the pristine WO3. Carrier distributions and loss characteristics were quantified using the optical transfer matrix method and incident photon-to-electron conversion efficiency measurements. These analyses reveal that Li-doping effectively suppresses carrier loss within the WO3 film and extends the carrier collection length by 8 nm, leading to significantly enhanced PEC performance. This work provides deeper insights into the charge dynamics of WO3 photoanodes, synergistically integrates experimental characterization with optoelectronic modeling, and lays a theoretical foundation for high-performance PEC device design.

Article Details

Volume / Issue Vol. 127, Issue 8
Published August 25, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

B

Baohan Gao

School of Physical Science and Technology, Lanzhou University 1 , Lanzhou 730000,

J

Jia Zhao

J

Jialin Shao

X

Xinping Zhai

Research Institute of Microscale Optoelectronics, School of Jia Yang, Zhejiang Shuren University 2 , Shaoxing 312028,

F

Fengsong Gao

School of Physical Science and Technology, Key Laboratory of Special Functional Materials and Devices, Ministry of Education, Lanzhou University 1 , Lanzhou 730000,

Y

Yujie Wang

Shenyang National Laboratory for Materials Science, Institute of Metal Research

R

Rui Hao

Z

Zemin Zhang