Ligand-assisted ion exchange enabled ultralong compositionally graded perovskite nanowires

M Meiqi An (School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,) J Jing Li J Jianliang Li H Hengshan Wang (School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,) H Huayi Tang (School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,) C Conghui Tan (School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,) M Mingqun Zhang (School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,) S Shuai Yang J Jiao Xu Y Yiming Yang (Department of Chemistry and International Institute for Nanotechnology)

Abstract

The bandgap engineering of halide perovskites via ion exchange has attracted extensive attention in recent years. However, the composition tuning at the microscale is still challenging due to complicated procedures for achieving spatial resolution. Herein, we report a facile and efficient approach for fabricating ultralong, compositionally graded CsPbBr3 − 3xI3x nanowires (NWs). By incorporating a ligand barrier onto the NW surface, the ion exchange is confined only to both ends of the NWs, leading to a compositional gradient extending over tens of micrometers along individual NWs. Further study shows that the funnel-like energy band structure facilitates the transport of photo-generated carriers, as evidenced by the excellent spectral and optoelectronic performance of the gradient NW device. Such ligand-assisted, spatially resolved band engineering is conducted at ambient conditions without additional process of nanofabrication or micro-manipulation, which is suitable for integration into miniaturized optoelectronic devices.

Article Details

Volume / Issue Vol. 127, Issue 8
Published August 25, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

M

Meiqi An

School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,

J

Jing Li

J

Jianliang Li

H

Hengshan Wang

School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,

H

Huayi Tang

School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,

C

Conghui Tan

School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,

M

Mingqun Zhang

School of Integrated Circuits, Dalian University of Technology 1 , No. 321 Tuqiang Street, Dalian 116024,

S

Shuai Yang

J

Jiao Xu

Y

Yiming Yang

Department of Chemistry and International Institute for Nanotechnology