Layer-dependent piezoelectricity and robust magnetic anisotropy in Janus CrSCl
Abstract
Two-dimensional Janus materials with both piezoelectricity and ferromagnetism hold great potential for multifunctional spintronic devices. Using first-principles calculations, we investigate monolayer and few-layer CrSCl, a Janus-type van der Waals material with out-of-plane asymmetry, to explore its layer-dependent electronic, piezoelectric, and magnetic properties. We find that stacking-induced dipoles increase the electrostatic potential difference between surfaces, saturating beyond four layers. The potential gradient induces layer-resolved band shifts, leading to a reduced bandgap and a semiconductor-to-semimetal transition. Enhanced screening and depolarization effects suppress the strain-induced polarization change, causing the out-of-plane piezoelectric coefficient d31 to decrease overall with increasing thickness. In contrast, the magnetic anisotropy remains stable: despite the emergence of additional layer-derived states approaching the Fermi level, both the out-of-plane easy axis and magnetic anisotropy energy remain unchanged. These results highlight few-layer CrSCl as a versatile platform for engineering coexisting piezoelectric and magnetic functionalities, with layer-dependent piezoelectricity and robust magnetic anisotropy.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Yaxin Pan
Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,
Yihang Bai
Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,
Bing Wang
Jun-Hyung Cho
Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,