Laser-based FinFET hot-carrier degradation resolved in time-domain
R
R. Ascázubi
(Intel Corp. , Hillsboro, Oregon 97124,)
B
B. Ajdari
(Intel Corp. , Hillsboro, Oregon 97124,)
Abstract
Hot-carrier degradation in contemporary FinFET transistors by means of ultrafast infrared laser pulses enable the study of the evolution of excited states leading to device degradation. Here, we present results from a time-resolved optical setup where additive populations of hot-carriers are photo-injected. We report the experimental observation of damage-inducing excited states with a lifetime of 170 ± 40 fs.
Article Details
Journal
Applied Physics Letters
Volume / Issue
Vol. 126, Issue 9
Published
March 01, 2025
ISSN
0003-6951
Publisher
American Institute of Physics
Journal Info
Applied Physics Letters
American Institute of Physics
ISSN: 0003-6951 Physical Sciences
Authors (2)
R
R. Ascázubi
Intel Corp. , Hillsboro, Oregon 97124,
B
B. Ajdari
Intel Corp. , Hillsboro, Oregon 97124,
Related Articles from this Journal
Interface engineering with an rGO electron extraction layer for high-efficiency and stable Cu2ZnSnS4-based photocathode
Zhenyan Xiao, Piao Zhang et al.
Aug 2026
10.1063/5.0312010
Transmission diffuse EUV scattering by nanoscale Lamb waves in thin membranes
Alessandra Milloch, Naman Agarwal et al.
Aug 2026
10.1063/5.0343558
Optimized Nb-doped SnO2 buffer layer for enhanced carrier extraction and Sb2S3 photovoltaic responses
Xinsheng Liu, Xiangyang Liu et al.
Aug 2026
10.1063/5.0343471
Exceptionally high thermoelectric power factors at low temperatures in heavily doped p- and n-type Ge-rich Ge1−xSnx films
Masashi Kurosawa, Takayoshi Katase et al.
Aug 2026
10.1063/5.0346412
Unlocking room-temperature magnetoelectricity in Ba1.5Sr1.5-based Z-type hexaferrites via magnetic anisotropy modulation
Huantong Wu, Jun Li et al.
Aug 2026
10.1063/5.0314711