Large orbital torque with concurrent mitigation of magnetic damping in titanium/rare-earth lutetium metallic heterostructures

X Xinkai Xu Y Yuanjing Qu (School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,) Q Qinghui Yang D Dainan Zhang H Huaiwu Zhang (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054,)

Abstract

Improving the spin–orbit torque efficiency is essential for achieving high-performance and low-power spintronic devices. However, enhancing torque efficiency inevitably intensifies spin pumping, which leads to an increase in the magnetic damping of the system. In this work, we demonstrate that Ti/rare-earth Lu/Permalloy (Py) metallic heterostructures generate large orbital torque without significantly increasing damping. Utilizing the spin-torque ferromagnetic resonance technique, the torque efficiency is measured to be approximately −0.228, which is comparable to that of the Ti/Pt/Py system. Furthermore, while delivering substantial orbital torque, the Gilbert damping constant of the Ti/Lu/Py metallic heterostructure increases by less than 5% compared to that of Ti/Py. In contrast, the damping in Ti/Pt/Py increases by approximately 82.6%. This difference arises because Lu exhibits an extremely small inverse spin Hall effect. Our findings indicate that light-metal/rare-earth Lu heterostructures hold great promise for realizing orbitronic devices that achieve both high efficiency and low damping.

Article Details

Volume / Issue Vol. 128, Issue 16
Published April 20, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

X

Xinkai Xu

Y

Yuanjing Qu

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,

Q

Qinghui Yang

D

Dainan Zhang

H

Huaiwu Zhang

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054,