Large magnetocaloric effect in triangular antiferromagnet ErPd2Sb

Z Zuhua Chen (Micro-Electronics Research Institute and School of Electronics and Information, Hangzhou Dianzi University 1 , Hangzhou, Zhejiang 310018,) X Xinyang Liu (School of Materials and Chemistry) J Jun Shen (Department of Radiology) G Guochun Zhang H Heng Tu (Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 2 , Beijing 100190,) J Junsen Xiang X Xinqi Zheng (School of Materials Science and Engineering) X Xiansong Liu (Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University 6 , Hefei, Anhui 230601,) X Xucai Kan (School of Materials Science and Engineering, Anhui University 6 , Hefei 230601,) W Wei Li D Dunhui Wang

Abstract

Adiabatic demagnetization refrigeration (ADR) has been considered as an main method for achieving temperature below 1 K. Due to the absence of long-range magnetic ordering at extremely low temperature, frustrated magnets are very competitive in cryogenic magnetic refrigerants. In this paper, we investigated the magnetocaloric effect of triangular antiferromagnet ErPd2Sb. No evident manetic ordering can be observed at temperature above 0.56 K. Large volumetric magnetic entropy change of 172.8 mJ·cm−3·K−1 is obtained under a small field change of 2 T at 1.3 K, which is larger than that of commercial magnetic refrigerant Gd3Ga5O12 under the same condition. Due to the strong magnetic frustration, the minmum temperature of ErPd2Sb is revealed to be 254.8 mK by quasi-ADR measurement, which is much lower than its magnetic ordering temperature. In addition, a field-induced phase trantition can be marked in ADR curve at 0.5 T, which is consistent with the measurement results of electrical resistivity. These excellent magnetocaloric effects indicate that ErPd2Sb is an ideal candidate for ultra-low temperature magnetic refrigeration application.

Article Details

Volume / Issue Vol. 126, Issue 15
Published April 14, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Z

Zuhua Chen

Micro-Electronics Research Institute and School of Electronics and Information, Hangzhou Dianzi University 1 , Hangzhou, Zhejiang 310018,

X

Xinyang Liu

School of Materials and Chemistry

J

Jun Shen

Department of Radiology

G

Guochun Zhang

H

Heng Tu

Technical Institute of Physics and Chemistry, Chinese Academy of Sciences 2 , Beijing 100190,

J

Junsen Xiang

X

Xinqi Zheng

School of Materials Science and Engineering

X

Xiansong Liu

Anhui Key Laboratory of Magnetic Functional Materials and Devices, School of Materials Science and Engineering, Anhui University 6 , Hefei, Anhui 230601,

X

Xucai Kan

School of Materials Science and Engineering, Anhui University 6 , Hefei 230601,

W

Wei Li

D

Dunhui Wang