Landau levels induced by synthetic strain in plasmonic metasurface

J Jie Chang Z Zhixia Xu (State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,) S Shunli Li (State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,) H Hongxin Zhao (State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,) X Xiaoxing Yin (State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,)

Abstract

The quantum Hall effect arises when electrons in a two-dimensional plane are subjected to a magnetic field, causing them to undergo cyclotron motion and form discrete energy levels, known as Landau levels. These levels play a critical role in condensed matter physics. However, practical limitations of applying a magnetic field have led to the introduction of pseudomagnetic fields, which can similarly induce Landau levels. Such pseudomagnetic fields are typically generated through synthetic strain, achieved by deforming geometric patterns, and have been applied to systems like graphene, photons, and phonon crystals. Building on previous research in electronics and optics, we present a plasmonic metasurface that induces Landau levels via synthetic strain in the microwave frequency range. This strain is realized by printing metal structures of specific shapes on a dielectric substrate using printed circuit board technology. The fundamental unit of the plasmonic metasurface is a C6 symmetric structure composed of six localized surface plasmon patches. By applying a displacement function along the transmission direction, we discretize the dispersion curve, leading to band degeneration and the emergence of edge states. The distribution of these edge states is influenced by the strength of the pseudomagnetic field, which is controlled by the magnitude of the displacement function. We validate our design through fabricated models and demonstrate the existence of edge states using near-field scanning experiments. Our work, which combines synthetic magnetic fields and plasmonic metasurface, provides valuable insights for the development and application of integrated photonic devices.

Article Details

Volume / Issue Vol. 126, Issue 5
Published February 03, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

J

Jie Chang

Z

Zhixia Xu

State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,

S

Shunli Li

State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,

H

Hongxin Zhao

State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,

X

Xiaoxing Yin

State Key Laboratory of Millimeter Waves, Southeast University , Nanjing 210096,