Investigation of kinetic inductance and microwave loss in thin-film TaCxN1−x superconducting resonators
Abstract
The promise of tantalum for realizing superconducting quantum devices has generated interest in its compound films, particularly nitrides. Among these, cubic-phase tantalum carbonitride (TaCxN1−x) offers reduced susceptibility to oxidation and a high critical temperature, yet its microwave properties remain largely unexplored. Here, we investigate plasma-enhanced atomic layer deposition of cubic-phase TaCxN1−x thin films for superconducting microwave circuits. Structural and transport measurements reveal nanocrystalline morphology with sub-10 nm grains and superconductivity in the dirty limit. Coplanar waveguide resonators exhibit moderately high kinetic inductance (16.8 pH/sq for 30 nm films) with potential for enhancement through dimensional scaling. The films also support high internal quality factors exceeding 105 at 50 mK in the single-photon regime, comparable to granular aluminum. Loss analysis identifies the two-level systems as the dominant limiting mechanism, with potential for further reduction through interface engineering. These results establish atomic layer deposited TaCxN1−x as a promising material for scalable, low-loss, high-inductance superconducting circuits.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Iliya Shiravand
Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,
Moeid Jamalzadeh
Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,
Man Nguyen
Booz Allen Hamilton 2 , McLean, Virginia 22012,
Christopher Nadeau
Booz Allen Hamilton 2 , McLean, Virginia 22012,
Miguel Manzo Perez
Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,
Sooyeon Hwang
Xiao Tong
Center for Functional Nanomaterials
Dmytro Nykypanchuk
Matthew LaHaye
Air Force Research Laboratory, Information Directorate 4 , Rome, New York 13441,
Davood Shahrjerdi
Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,