Investigation of kinetic inductance and microwave loss in thin-film TaCxN1−x superconducting resonators

I Iliya Shiravand (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,) M Moeid Jamalzadeh (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,) M Man Nguyen (Booz Allen Hamilton 2 , McLean, Virginia 22012,) C Christopher Nadeau (Booz Allen Hamilton 2 , McLean, Virginia 22012,) M Miguel Manzo Perez (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,) S Sooyeon Hwang X Xiao Tong (Center for Functional Nanomaterials) D Dmytro Nykypanchuk M Matthew LaHaye (Air Force Research Laboratory, Information Directorate 4 , Rome, New York 13441,) D Davood Shahrjerdi (Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,)

Abstract

The promise of tantalum for realizing superconducting quantum devices has generated interest in its compound films, particularly nitrides. Among these, cubic-phase tantalum carbonitride (TaCxN1−x) offers reduced susceptibility to oxidation and a high critical temperature, yet its microwave properties remain largely unexplored. Here, we investigate plasma-enhanced atomic layer deposition of cubic-phase TaCxN1−x thin films for superconducting microwave circuits. Structural and transport measurements reveal nanocrystalline morphology with sub-10 nm grains and superconductivity in the dirty limit. Coplanar waveguide resonators exhibit moderately high kinetic inductance (16.8 pH/sq for 30 nm films) with potential for enhancement through dimensional scaling. The films also support high internal quality factors exceeding 105 at 50 mK in the single-photon regime, comparable to granular aluminum. Loss analysis identifies the two-level systems as the dominant limiting mechanism, with potential for further reduction through interface engineering. These results establish atomic layer deposited TaCxN1−x as a promising material for scalable, low-loss, high-inductance superconducting circuits.

Article Details

Volume / Issue Vol. 127, Issue 19
Published November 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

I

Iliya Shiravand

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,

M

Moeid Jamalzadeh

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,

M

Man Nguyen

Booz Allen Hamilton 2 , McLean, Virginia 22012,

C

Christopher Nadeau

Booz Allen Hamilton 2 , McLean, Virginia 22012,

M

Miguel Manzo Perez

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,

S

Sooyeon Hwang

X

Xiao Tong

Center for Functional Nanomaterials

D

Dmytro Nykypanchuk

M

Matthew LaHaye

Air Force Research Laboratory, Information Directorate 4 , Rome, New York 13441,

D

Davood Shahrjerdi

Electrical and Computer Engineering, New York University 1 , Brooklyn, New York 11201,