Interfacial stress-insensitive tetragonal (Ba,Ca)TiO3-doped BiFeO3 films with superior ferroelectricity and piezoelectricity

T Teng Li (Sun Yat-sen University ,) H Hao Zhuo S Shudong Hu B Botao Shao (Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,) J Juan Zhang Y Yanqi Wu L Liqiang Xu (Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China) F Feng Chen

Abstract

Highly desired tetragonal BiFeO3 (BF) films with relatively large polarization are usually realized under large compressive epitaxial strain. Herein, we observed that 0.67BiFeO3–0.33(Ba0.85Ca0.15)TiO3 (BF–BCT) films exhibit a stable tetragonal phase and are insensitive to the interfacial stress induced by in-plane lattice mismatch. The films were grown on three distinct (001)-oriented SrTiO3, LaAlO3, and YAlO3 substrates, each with different in-plane lattice constants. The x-ray diffraction analysis confirmed the tetragonal phase of all BF–BCT films, as indicated by a large tetragonality (c/a) greater than 1.05. All these BF–BCT films demonstrated substantial ferroelectric properties with twice the remnant polarization values (2Pr) of 155–208 μC/cm2, and enhanced piezoelectric behavior with effective piezoelectric coefficients (d33*) of 38–52 pm/V. Meanwhile, all BF–BCT films exhibited high stability with minimal performance degradation under varying frequencies (50 Hz–1 kHz) and thermal cycling (25–100 °C). These findings indicate the BF–BCT films as promising candidates for next-generation multifunctional devices.

Article Details

Volume / Issue Vol. 127, Issue 5
Published August 04, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

T

Teng Li

Sun Yat-sen University ,

H

Hao Zhuo

S

Shudong Hu

B

Botao Shao

Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,

J

Juan Zhang

Y

Yanqi Wu

L

Liqiang Xu

Key Laboratory of Colloid and Interface Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, State Key Laboratory of Crystal Material, Shandong University, Jinan 250100, China

F

Feng Chen