Interfacial energy-level engineering with bilayer hole transport layers for suppressing phase separation in mixed-halide perovskites

P Pengxi Wang X Xiaorong Qi (Department of Microelectronic Science and Engineering, Ningbo University , Ningbo 315211,) B Biao Yang (State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials Oriented Chemical Engineering, School of Chemical Engineering) L Li Sheng (Hefei Metrology and Testing Center) R Ran Zhao (Chemical Engineering Experiment Teaching Center, School of Chemical Engineering) M Mingyang Huang C Cheng Yang (Institute of Materials Research) X Xu Wang F Fei Zheng Z Zhenfu Zhao (Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University 1 , Ningbo 315211,) Z Ziyang Hu (Department of Chemistry, The University of Hong Kong 1 , Pokfulam Road, Hong Kong,)

Abstract

Mixed-halide perovskites suffer from light-induced ion migration, causing phase separation and reduced stability. Current strategies, such as compositional engineering or additive passivation, partially mitigate these issues but often overlook critical factors like carrier extraction efficiency and interfacial energy-level alignment. Here, we introduce a PEDOT:PSS/NiOx bilayer hole transport layer (HTL) that optimizes energy-level alignment, achieving a threefold enhanced hole extraction rate (kH = 1.17 × 108 s−1). Comprehensive microscopic analyses reveal that the optimized bilayer HTL effectively reduces localized charge accumulation, kinetically suppressing ion migration and phase separation. Consequently, the perovskite film retains compositional homogeneity under prolonged illumination, substantially enhancing both photovoltaic performance and operational stability. This work provides valuable insights into interfacial energy-level engineering for mixed-halide perovskites and offers practical strategies for designing robust perovskite solar cells.

Article Details

Volume / Issue Vol. 127, Issue 9
Published September 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

P

Pengxi Wang

X

Xiaorong Qi

Department of Microelectronic Science and Engineering, Ningbo University , Ningbo 315211,

B

Biao Yang

State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials Oriented Chemical Engineering, School of Chemical Engineering

L

Li Sheng

Hefei Metrology and Testing Center

R

Ran Zhao

Chemical Engineering Experiment Teaching Center, School of Chemical Engineering

M

Mingyang Huang

C

Cheng Yang

Institute of Materials Research

X

Xu Wang

F

Fei Zheng

Z

Zhenfu Zhao

Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University 1 , Ningbo 315211,

Z

Ziyang Hu

Department of Chemistry, The University of Hong Kong 1 , Pokfulam Road, Hong Kong,