Interfacial effects of cobalt in SrTiO3 devices for robust synaptic plasticity

Abstract

In oxide memristors, improved memory parameters are often associated with physical mechanisms that are also favorable for synaptic operation, including interface-controlled transport. Here, we investigate synapse-like behavior in perovskite-type oxide SrTiO3 synaptic memristor devices with an interface-driven memory window. Using electrical pulse stimulation, the Co/SrTiO3/Au devices exhibit a very high paired-pulse facilitation of 390%, a strong learning response, and robust analog conductance modulation. Our results speculate that the interface between metal and oxide film is a key parameter in enabling short-term plasticity and reliable synaptic functionality in oxide memristors.