Integrating ferroelectric Hf0.5Zr0.5O2 films with SrTiO3 by two-dimensional electron gas at interfaces

H Huadong Yu (Research & Development Institute of Northwestern Polytechnical University in Shenzhen 1 , Shenzhen 518063,) H Huapei Zhu (Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University 2 , Xi'an, Shaanxi 710072,) W Wen An (Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education), Carbon Neutrality Interdisciplinary Science Centre/College of Environmental Science and Engineering, Nankai University) S Shuanhu Wang (Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University 2 , Xi'an, Shaanxi 710072,) H Hong Yan (State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry) K Kexin Jin (Research & Development Institute of Northwestern Polytechnical University in Shenzhen 1 , Shenzhen 518063,)

Abstract

Integrating multiple functionalities within a single electronic device remains a pivotal research focus, particularly for achieving the coexistence of ferroelectricity and metallic conductivity. As symmetry-broken systems, complex oxide interfaces exhibit diverse correlated phenomena that enable the coupling of distinct properties. Here, we fabricate Hf0.5Zr0.5O2/SrTiO3 heterostructures with reproducible metallic two-dimensional electron gas (2DEG) at their interfaces. By employing the interfacial 2DEG as the bottom electrode in a parallel-plate capacitor configuration, the fabricated Pt/Hf0.5Zr0.5O2/2DEG/SrTiO3 devices demonstrate pronounced ferroelectricity in Hf0.5Zr0.5O2 films. Elucidating the mechanism of the coexistence of metallic conductivity and ferroelectricity at the interfaces is crucial for advancing ferroelectric metals in complex oxides and developing multifunctional devices.

Article Details

Volume / Issue Vol. 127, Issue 20
Published November 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

H

Huadong Yu

Research & Development Institute of Northwestern Polytechnical University in Shenzhen 1 , Shenzhen 518063,

H

Huapei Zhu

Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University 2 , Xi'an, Shaanxi 710072,

W

Wen An

Key Laboratory of Pollution Processes and Environmental Criteria (Ministry of Education), Carbon Neutrality Interdisciplinary Science Centre/College of Environmental Science and Engineering, Nankai University

S

Shuanhu Wang

Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, School of Physical Science and Technology, Northwestern Polytechnical University 2 , Xi'an, Shaanxi 710072,

H

Hong Yan

State Key Laboratory of Coordination Chemistry, Jiangsu Key Laboratory of Advanced Organic Materials, School of Chemistry

K

Kexin Jin

Research & Development Institute of Northwestern Polytechnical University in Shenzhen 1 , Shenzhen 518063,