Incoherent phonon transport dominates the out-of-plane thermal conductivity of epitaxial van der Waals Bi2Se3/In2Se3 superlattices

D Daniel Brito (West Virginia University, Morgantown, West Virginia, United States) J James Caleb Peters (International Iberian Nanotechnology Laboratory 1 , Av. Mestre Jose Veiga, Braga 4715-330,) F Francis Leonard Deepak (Nanostructured Materials Group, International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, Braga 4715-330, Portugal) S Sascha Sadewasser (International Iberian Nanotechnology Laboratory 1 , Av. Mestre Jose Veiga, Braga 4715-330,) F Francisco Rivadulla (Centro Singular De Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química‐Física Universidade De Santiago De Compostela Santiago de Compostela Spain) M Marcel S. Claro (CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 3 , 15782 Santiago de Compostela,)

Abstract

The increase in thermal conductivity, κ, at small period lengths in covalently bonded semiconductor and oxide epitaxial superlattices (SLs) is a hallmark of coherent phonon transport and a route for improving heat dissipation in the thin limit. Here, we show that, on the contrary, the phonon coherence length remains shorter than the minimum SL period in van der Waals (vdW) SLs. We measured the cross-plane κz of epitaxial Bi2Se3/β-In2Se3 vdW SLs grown by molecular beam epitaxy; our results show that κ decreases monotonically with increasing interface density down to the two-layer period limit. This suggests that the weak interface vdW bonding of these SLs results in diffusive phonon transport over the whole period range. We discuss further reduction to single-layer SLs and its effects on crystal and interface quality. The results presented in this paper highlight a constraint for thermal management in vdW-based nanoelectronic and thermoelectric devices.

Article Details

Volume / Issue Vol. 127, Issue 23
Published December 08, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

D

Daniel Brito

West Virginia University, Morgantown, West Virginia, United States

J

James Caleb Peters

International Iberian Nanotechnology Laboratory 1 , Av. Mestre Jose Veiga, Braga 4715-330,

F

Francis Leonard Deepak

Nanostructured Materials Group, International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, Braga 4715-330, Portugal

S

Sascha Sadewasser

International Iberian Nanotechnology Laboratory 1 , Av. Mestre Jose Veiga, Braga 4715-330,

F

Francisco Rivadulla

Centro Singular De Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química‐Física Universidade De Santiago De Compostela Santiago de Compostela Spain

M

Marcel S. Claro

CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 3 , 15782 Santiago de Compostela,