Improved performance of polycrystalline antiferromagnet/ferromagnet stack by nitrogen-assisted deposition

Y Y. Khaydukov (Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,) G G. McCafferty (Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,) A A. Dobrynin (Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,) A A. Devishvili (Institute Laue Langevin 2 , Grenoble,) A A. Vorobiev (Department of Physics and Astronomy, Uppsala University 3 , Uppsala,) P P. Bencok (Diamond Light Source 4 , Didcot, Oxfordshire OX11 0DE,) R R. Fan P P. Steadman (Diamond Light Source 4 , Didcot, Oxfordshire OX11 0DE,) K K. McNeill (Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,) M M. Ormston (Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,)

Abstract

The deposition process of the IrMn3/Co70Fe30 bilayer of antiferromagnet/ferromagnet (AF/FM) type was modified by introducing a nitrogen additive in argon plasma during the magnetron sputtering of the Co70Fe30 layer. This slight modification significantly enhanced the exchange bias energy density and reduced coercivity of an AF/FM bilayer for the AF IrMn layer thickness ranging from 20 to 50 Å. Calculations indicate that the boost in exchange bias energy density and the reduction in coercivity can be attributed to the increased anisotropy energy of the AF layer, resulting in more effective pinning of the FM layer by AF grains. The increase in anisotropy is caused by the diffusion of nitrogen from the FM into the AF layer, as established by x-ray diffraction, neutron reflectometry, and x-ray magnetic circular dichroism. Our research allows us to improve magnetic characteristics of exchange-coupled FM/AF structures through minor modifications in the sputtering process and/or save up to 20% of the costly IrMn3 target by reducing the thickness of the AF layer.

Article Details

Volume / Issue Vol. 126, Issue 22
Published June 02, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

Y

Y. Khaydukov

Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,

G

G. McCafferty

Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,

A

A. Dobrynin

Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,

A

A. Devishvili

Institute Laue Langevin 2 , Grenoble,

A

A. Vorobiev

Department of Physics and Astronomy, Uppsala University 3 , Uppsala,

P

P. Bencok

Diamond Light Source 4 , Didcot, Oxfordshire OX11 0DE,

R

R. Fan

P

P. Steadman

Diamond Light Source 4 , Didcot, Oxfordshire OX11 0DE,

K

K. McNeill

Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,

M

M. Ormston

Seagate Technology 1 , Derry, Northern Ireland BT48 0BF,