Improved interface contact and defect passivation for enhanced charge dynamics of perovskite photovoltaics

X Xiangyang Liu (Institute of Metal Research, Shenyang National Laboratory for Materials Science, Chinese Academy of Sciences) B Bingyan Fu (School of Telecommunications Engineering, Xidian University 2 , Xi'an 710126,) S Siyuan Liu (Sydney Dental School, Faculty of Medicine and Health, Charles Perkins Centre) H Huaxun Wang (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) Z Zehao Liu (College of Optical and Electronic Technology, China Jiliang University 2 , 310018 Hangzhou,) X Xinghan Hou (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) S Shipu Wang (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) Y Yurui Fu (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) J Jinming Tu (School of Physics & Electronics, Henan University 1 , Kaifeng 475004,) J Jiahui Huang S Siqi Hou (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) M Mohan Cheng (School of Physics & Electronics, Henan University 1 , Kaifeng 475004,) Y Yiyan Lu (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,) Y Yijing Zheng (School of Physics & Electronics, Henan University 2 , Kaifeng 475004,)

Abstract

Compact and uniform electron transport layers with additional functionality can effectively suppress carrier recombination and facilitate charge extraction. To regulate the preparation process and functionalize tin oxide (SnO2), potassium citrate is added into SnO2 solution to inhibit aggregation of SnO2 precursors. The incorporated carboxyl functional groups can improve film coverage and reduce interface traps. The additional K+ ions will penetrate into perovskite films and impede the formation of Frenkel defects to promote rapid charge separation and extraction. The functionalized SnO2 with high crystallinity can also improve fusion between nanocrystals and reduce grain boundaries. Enhanced electrical properties for the optimized SnO2 are realized using potassium citrate compared to single SnO2 due to the increased electron mobility. The conformal SnO2 film including carboxyl functional groups also forms a shielding layer against oxygen and water vapor permeation. A high power conversion efficiency of 23.95% (a VOC of 1.166 V, a JSC of 24.90 mA cm−2, and an FF of 0.825) is achieved for the champion device. The optimized device also shows the highly enhanced light/thermal stability. In addition, the whole charge dynamics (separation, extraction, and recombination) is discussed. Additionally, a simple strategy for scalable fabrication and commercialization of perovskite photovoltaics is provided based on the spin-coated SnO2 with functionality.

Article Details

Volume / Issue Vol. 128, Issue 8
Published February 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

X

Xiangyang Liu

Institute of Metal Research, Shenyang National Laboratory for Materials Science, Chinese Academy of Sciences

B

Bingyan Fu

School of Telecommunications Engineering, Xidian University 2 , Xi'an 710126,

S

Siyuan Liu

Sydney Dental School, Faculty of Medicine and Health, Charles Perkins Centre

H

Huaxun Wang

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

Z

Zehao Liu

College of Optical and Electronic Technology, China Jiliang University 2 , 310018 Hangzhou,

X

Xinghan Hou

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

S

Shipu Wang

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

Y

Yurui Fu

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

J

Jinming Tu

School of Physics & Electronics, Henan University 1 , Kaifeng 475004,

J

Jiahui Huang

S

Siqi Hou

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

M

Mohan Cheng

School of Physics & Electronics, Henan University 1 , Kaifeng 475004,

Y

Yiyan Lu

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,

Y

Yijing Zheng

School of Physics & Electronics, Henan University 2 , Kaifeng 475004,